Ohmi, Shun-ichiro: search on Z-Library

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1

NiSi salicide technology for scaled CMOS

Hiroshi Iwai, Tatsuya Ohguro, Shun-ichiro Ohmi

Journal:

Microelectronic Engineering

Year:

2002

Language:

english

File:

PDF, 1.81 MB

english, 2002

2

Characterization of ferroelectric BaMgF4 films grown on AlGaAs/GaAs(100) high-electron-mobility transistor structures

Shun-ichiro Ohmi, Eisuke Tokumitsu, Hiroshi Ishiwara

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 307 KB

english, 1995

3

Effects of Kr sputtering on ultrathin PtHfSi film formation

Yoshimura, Yasuhiko, Ohmi, Shun-ichiro

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 304 KB

english, 2014

4

Anisotropic high-k deposition for gate-last processing of metal-oxide-semiconductor field-effect transistor utilizing electron-cyclotron-resonance plasma sputtering

Yoshiaki Kikuchi, Jun Gao, Takahiro Sano, Shun-ichiro Ohmi

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 1.09 MB

english, 2012

5

Variability Improvement by Si Surface Flattening of Electrical Characteristics in MOSFETs With High-k HfON Gate Insulator

Ohmi, Shun-ichiro, Kudoh, Sohya, Atthi, Nithi

Journal:

IEEE Transactions on Semiconductor Manufacturing

Year:

2015

Language:

english

File:

PDF, 927 KB

english, 2015

6

Ultra-low Contact Resistivity of PtHf Silicide Utilizing Dopant Segregation Process

Ohmi, Shun-ichiro, Chen, Mengyi, Masahiro, Yasushi

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.49 MB

english, 2016

7

A study on selective etching for elevated PtSi salicide process and work function modulation of PtSi alloying with Hf

Shun-Ichiro Ohmi, Jun Gao

Journal:

Electronics and Communications in Japan

Year:

2010

Language:

english

File:

PDF, 1.65 MB

english, 2010

8

Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

Hiroki, Mizuha, Maeda, Yasutaka, Ohmi, Shun-ichiro

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 2.26 MB

english, 2018

9

Experimental demonstration of a ferroelectric FET using paper substrate

Shin, Changhwan, Lee, Gwang-Geun, Han, Dae-Hee, Han, Seung-Pil, Tokumitsu, Eisuke, Ohmi, Shun-Ichiro, Kim, Dong-Joo, Ishiwara, Hiroshi, Park, Minseo, Kim, Seung-Hyun, Lee, Wan-Gyu, Hwang, Yun Jeong, P

Journal:

IEICE Electronics Express

Year:

2014

Language:

english

File:

PDF, 1.30 MB

english, 2014

10

Thermal stability improvement of pentacene-based OFET utilizing amorphous rubrene passivation layer

Park, Kyung Eun, OHMI, Shun-ichiro

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 1.07 MB

english, 2019

11

Space-Charge-Limited Currents in La 2 O 3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing

Kim, Yongshik, Ohmi, Shun-ichiro, Tsutsui, Kazuo, Iwai, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 436 KB

english, 2005

12

A Study on Selective Etching of SiGe Layers in SiGe/Si Systems for Device Applications

Yamazaki, Takashi, Sekikawa, Tomohide, Morita, Shinya, Hakamada, Yoshitaka, Ohri, Hiroyuki, Ohmi, Shun-ichiro, Sakai, Tetsushi

Journal:

MRS Proceedings

Year:

2003

Language:

english

File:

PDF, 1.35 MB

english, 2003

13

Study of Epitaxial Growth of Rotational-Twin-Free C a F 2 Films on Si(111)

Ohmi, Shun-ichiro, Tsutsui, Kazuo, Furukawa, Seijiro

Journal:

Japanese Journal of Applied Physics

Year:

1994

File:

PDF, 727 KB

1994

14

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

Ohmi, Shun-ichiro, Liu, Yeyuan

Journal:

IEICE Electronics Express

Year:

2015

Language:

english

File:

PDF, 944 KB

english, 2015

15

Investigation of pentacene growth on SiO 2 gate insulator after photolithography for nitrogen-doped LaB 6 bottom-contact electrode formation

Maeda, Yasutaka, Hiroki, Mizuha, Ohmi, Shun-ichiro

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.61 MB

english, 2018

16

Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system

Ohmi, Shun-ichiro

Journal:

IEICE Electronics Express

Year:

2014

Language:

english

File:

PDF, 2.38 MB

english, 2014

17

Modulation of PtSi Work Function by Alloying with Low Work Function Metal

GAO, Jun, ISHIKAWA, Jumpei, OHMI, Shun-ichiro

Journal:

IEICE Transactions on Electronics

Year:

2011

Language:

english

File:

PDF, 960 KB

english, 2011

18

Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET

MAEDA, Yasutaka, OHMI, Shun-ichiro, GOTO, Tetsuya, OHMI, Tadahiro

Journal:

IEICE Transactions on Electronics

Year:

2017

Language:

english

File:

PDF, 1.08 MB

english, 2017

19

[IEEE 2020 Device Research Conference (DRC) - Columbus, OH, USA (2020.6.21-2020.6.24)] 2020 Device Research Conference (DRC) - High-k LaB x N y gate insulator formed by the Ar/N 2 plasma sputtering of N-doped LaB 6 metal thin films and its application to floating-gate memory

Park, Kyung Eun, Ohmi, Shun-ichiro

Year:

2020

File:

PDF, 2.33 MB

2020

20

Bias-voltage-dependent measurement of apparent barrier height on low-work-function thin film

Nagaoka, Katsumi, Ohmi, Shun-ichiro

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2020

File:

PDF, 1.11 MB

2020

21

High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer

MAEDA, Yasutaka, OHMI, Shun-ichiro, GOTO, Tetsuya, OHMI, Tadahiro

Journal:

IEICE Transactions on Electronics

Year:

2016

Language:

english

File:

PDF, 2.16 MB

english, 2016

22

[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization

Ohmi, Shun-Ichiro, Ding, Yizhe, Kudoh, Sohya

Year:

2019

File:

PDF, 292 KB

2019

23

Work function modulation of PtSi by alloying with Yb

Ishikawa, Jumpei, Gao, Jun, Ohmi, Shun-ichiro

Journal:

IEICE Electronics Express

Year:

2011

Language:

english

File:

PDF, 637 KB

english, 2011

24

A study on precise control of PtSi work function by alloying with Hf

Gao, Jun, Ishikawa, Jumpei, Ohmi, Shun-ichiro

Journal:

IEICE Electronics Express

Year:

2011

Language:

english

File:

PDF, 452 KB

english, 2011

25

Investigation of bilayer HfNx gate insulator utilizing ECR plasma sputtering

Atthi, Nithi, Ohmi, Shun-ichiro

Journal:

IEICE Electronics Express

Year:

2016

Language:

english

File:

PDF, 750 KB

english, 2016

26

Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures

Ohmi, Shun-ichiro, Tokumitsu, Eisuke, Ishiwara, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

1995

File:

PDF, 541 KB

1995

27

Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering

Han, Huiseong, Ohmi, Shun-ichiro

Journal:

IEICE Electronics Express

Year:

2012

Language:

english

File:

PDF, 437 KB

english, 2012

28

Scanning tunneling spectroscopy study of 20 nm-thick nitrogen-doped lanthanum hexaboride thin film

Nagaoka, Katsumi, Hayami, Wataru, Ohmi, Shun-ichiro

Journal:

Year:

2019

Language:

english

File:

PDF, 1.04 MB

english, 2019

29

Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO 2 Gate Insulator

Ohmi, Shun-ichiro, Kamino, Kousuke, Ishiwara, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 2.89 MB

english, 2013

30

A Study on Selective Etching for Elevated PtSi Salicide Process and Work Function Modulation of PtSi Alloying with Hf

Ohmi, Shun-ichiro, Gao, Jun

Journal:

IEEJ Transactions on Electronics Information and Systems

Year:

2008

File:

PDF, 1.01 MB

2008

31

HfO x N y Thin-Film Formation on Three-Dimensional Si Structure Utilizing Electron Cyclotron Resonance Sputtering

Sano, Takahiro, Ohmi, Shun-ichiro

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 302 KB

english, 2009

32

Fully Room-Temperature-Fabricated Low-Voltage Operating Pentacene-Based Organic Field-Effect Transistors With HfON Gate Insulator

Liao, Min, Ishiwara, Hiroshi, Ohmi, Shun-ichiro

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 267 KB

english, 2011

33

Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering

Han, Dae-Hee, Han, Huiseong, Ohmi, Shun-ichiro

Journal:

IEICE Electronics Express

Year:

2013

Language:

english

File:

PDF, 1.18 MB

english, 2013

34

[IEEE 2017 IEEE International Interconnect Technology Conference (IITC) - HsinChu, Taiwan (2017.5.16-2017.5.18)] 2017 IEEE International Interconnect Technology Conference (IITC) - Evaluation of contact resistivity of PtHfSi to p-Si(100) with dopant segregation process

Ohmi, Shun-ichiro, Tsukamoto, Yuya, Zuo, Weiguang, Masahiro, Yasushi

Year:

2017

Language:

english

File:

PDF, 248 KB

english, 2017

35

[IEEE 2007 International Symposium on Semiconductor Manufacturing - Santa Clara, CA, USA (2007.10.15-2007.10.17)] 2007 International Symposium on Semiconductor Manufacturing - Investigation of PDA process to improve electrical characteristics of HfOxNy High-k dielectric formed by ECR plasma oxidation of HfN

Shun-ichiro Ohmi,, Yusuke Nakano,

Year:

2007

Language:

english

File:

PDF, 1.10 MB

english, 2007

36

Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal–Oxide–Semiconductor Diodes with Yb Donor Layer

Song, Younguk, Ishiwara, Hiroshi, Ohmi, Shun-ichiro

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 987 KB

english, 2012

37

Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes

MAEDA, Yasutaka, HIROKI, Mizuha, OHMI, Shun-ichiro

Journal:

IEICE Transactions on Electronics

Year:

2018

Language:

english

File:

PDF, 1.77 MB

english, 2018

38

Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation

Yongshik Kim, Kunihiro Miyauchi, Shun-ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai

Journal:

Microelectronics Journal

Year:

2005

Language:

english

File:

PDF, 246 KB

english, 2005

39

Si Surface Orientation Dependence on the Electrical Characteristics of HfN Gate Insulator with sub-0.5 nm EOT Formed by ECR Plasma Sputtering

Atthi, Nithi, Han, Dae-Hee, Ohmi, Shun-ichiro

Journal:

MRS Proceedings

Year:

2014

Language:

english

File:

PDF, 509 KB

english, 2014

40

[IEEE 2017 75th Device Research Conference (DRC) - South Bend, IN, USA (2017.6.25-2017.6.28)] 2017 75th Annual Device Research Conference (DRC) - Influence of Si(100) surface flattening process on nonvolatile memory characteristics of Hf-based MONOS structures

Kudoh, Sohya, Ohmi, Shun-ichiro

Year:

2017

Language:

english

File:

PDF, 371 KB

english, 2017

41

Excellent Current Drivability and Environmental Stability in Room-Temperature-Fabricated Pentacene-Based Organic Field-Effect Transistors With ${\rm HfO}_{2}$ Gate Insulators

Liao, Min, Ishiwara, Hiroshi, Ohmi, Shun-Ichiro

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 1.34 MB

english, 2014

42

A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics

KUDOH, Sohya, OHMI, Shun-ichiro

Journal:

IEICE Transactions on Electronics

Year:

2016

Language:

english

File:

PDF, 817 KB

english, 2016

43

Reduction of process temperature for Si surface flattening utilizing Ar/H2 ambient annealing and its application to SOI-MISFETs with bilayer HfN high-k gate insulator

OHMI, Shun-ichiro, Horiuchi, Yusuke, Ishimatsu, Shin, Kudoh, Sohya

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 516 KB

english, 2019

44

Croconic Acid Thin Film Formation for Ferroelectric Gate OFETs

Ohmi, Shun-ichiro, Takayama, Kazuaki, Ishiwara, Hiroshi

Journal:

MRS Proceedings

Year:

2013

Language:

english

File:

PDF, 757 KB

english, 2013

45

Dry Etching of Cr 2 O 3 /Cr Stacked Film during Resist Ashing by Oxygen Plasma

Tonotani, Junichi, Ohmi, Shun-ichiro, Iwai, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 188 KB

english, 2005

46

Contact resistivity reduction for PtSi/Si(100) by dopant segregation process

Ohmi, Shun-ichiro, Arima, Jun

Journal:

IEICE Electronics Express

Year:

2013

Language:

english

File:

PDF, 1.15 MB

english, 2013

47

Formation Mechanism of Atomically Flat Si(100) Surface by Annealing in Ar/H2 Ambient

Kudoh, Sohya, Ohmi, Shun-ichiro

Journal:

Journal of Electronic Materials

Year:

2017

Language:

english

File:

PDF, 1.51 MB

english, 2017

48

In situ formation of Hf-based metal/oxide/nitride/oxide/silicon structure for nonvolatile memory application

Kudoh, Sohya, Ohmi, Shun-ichiro

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.95 MB

english, 2018

49

The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)

KIM, Min Gee, OHMI, Shun-ichiro

Journal:

IEICE Transactions on Electronics

Year:

2019

Language:

english

File:

PDF, 997 KB

english, 2019

50

Reduction of process temperature for Si surface flattening utilizing Ar/H2 ambient annealing and its application to SOI-MISFETs with bilayer HfN high-k gate insulator

OHMI, Shun-ichiro, Horiuchi, Yusuke, Ishimatsu, Shin, Kudoh, Sohya

Journal:

Japanese Journal of Applied Physics

Year:

2019

File:

PDF, 516 KB

2019

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